Integrated Device Technology, Inc. 71T75902S85BGG | 搜芯易Sourcengine

Integrated Device Technology, Inc. 71T75902S85BGG

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
SRAM Chip Sync Single 2.5V 18M-bit 1M x 18 8.5ns 119-Pin BGA Tray
类别
Semiconductors Memory ICs

ECCN
3A991.B.2.A
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
14.0000
Length (mm)
22.0000
JESD-30 Code
R-PBGA-B119
Memory Width
18
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
ZBT SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
TIN SILVER COPPER
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
FLOW-THROUGH ARCHITECTURE
Memory Organization
1MX18
Number of Functions
1
Number of Terminals
119
Terminal Pitch (mm)
1.270
Access Time-Max (ns)
8.5000000000000000
Number of Words Code
1M
Memory Density (bits)
18874368.0000000000000000
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
2.3600
Supply Voltage-Max (V)
2.62500
Supply Voltage-Min (V)
2.37500
Supply Voltage-Nom (V)
2.5
Number of Words (words)
1048576.0000000000000000
Standby Current-Max (A)
0.040000000000000
Standby Voltage-Min (V)
2.380000
Supply Current-Max (mA)
225.000000000000000
Package Equivalence Code
BGA119,7X17,50
Clock Frequency-Max (MHz)
90.00000
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85.0
Operating Temperature-Min (Cel)
-40.0
Time@Peak Reflow Temperature-Max (s)
30