Integrated Device Technology, Inc. 71256TTSA20YG | 搜芯易Sourcengine

Integrated Device Technology, Inc. 71256TTSA20YG

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Application Specific SRAM, 32KX8, 20ns, CMOS, PDSO28
类别
Semiconductors Memory ICs SRAMs APPLICATION SPECIFIC SRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PDSO-J28
Memory Width
8
Package Code
SOJ
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
J BEND
J-STD-609 Code
e3
Memory IC Type
APPLICATION SPECIFIC SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Memory Organization
32KX8
Number of Terminals
28
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
20
Number of Words Code
32K
Memory Density (bits)
262144
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
5
Number of Words (words)
32768
Standby Current-Max (A)
0.015
Standby Voltage-Min (V)
4.5
Supply Current-Max (mA)
145
Package Equivalence Code
SOJ28,.34
Moisture Sensitivity Level
1
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0