Integrated Device Technology, Inc. 70V9369L12PF8 | 搜芯易Sourcengine

Integrated Device Technology, Inc. 70V9369L12PF8

生命周期状态
Transferred
说明
TQFP 14.00x14.00x1.40 mm 0.50mm Pitch
类别
Semiconductors Memory ICs SRAMs MULTI-PORT SRAM

ECCN
3A991.b.2.b
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
14
Length (mm)
20
JESD-30 Code
R-PQFP-G100
Memory Width
18
Package Code
LQFP
Package Shape
RECTANGULAR
Package Style
FLATPACK, LOW PROFILE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e0
Memory IC Type
MULTI-PORT SRAM
Operating Mode
SYNCHRONOUS
Number of Ports
2
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
QUAD
Additional Feature
FLOW-THROUGH OR PIPELINED ARCHITECTURE
Memory Organization
16KX18
Number of Functions
1
Number of Terminals
100
Terminal Pitch (mm)
0.65
Access Time-Max (ns)
12
Number of Words Code
16K
Memory Density (bits)
294912
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.6
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
3
Supply Voltage-Nom (V)
3.3
Number of Words (words)
16384
Standby Current-Max (A)
0.005
Standby Voltage-Min (V)
3
Supply Current-Max (mA)
205
Package Equivalence Code
QFP100,.63SQ,20
Clock Frequency-Max (MHz)
50
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
240
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0
Time@Peak Reflow Temperature-Max (s)
20