Integrated Device Technology, Inc. 70V659S10DR | 搜芯易Sourcengine

Integrated Device Technology, Inc. 70V659S10DR

生命周期状态
Transferred
REACH
REACH compliant
说明
PQFP 28.00x28.00x3.50 mm 0.50mm Pitch
类别
Semiconductors Memory ICs SRAMs MULTI-PORT SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
28
Length (mm)
28
JESD-30 Code
S-PQFP-G208
Memory Width
36
Package Code
FQFP
Package Shape
SQUARE
Package Style
FLATPACK, FINE PITCH Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e0
Memory IC Type
MULTI-PORT SRAM
Operating Mode
ASYNCHRONOUS
Number of Ports
2
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
QUAD
Memory Organization
128KX36
Number of Functions
1
Number of Terminals
208
Terminal Pitch (mm)
0.5
Access Time-Max (ns)
10
Number of Words Code
128K
Memory Density (bits)
4718592
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
4.1
Supply Voltage-Max (V)
3.45
Supply Voltage-Min (V)
3.15
Supply Voltage-Nom (V)
3.3
Number of Words (words)
131072
Standby Current-Max (A)
0.015
Standby Voltage-Min (V)
3.15
Supply Current-Max (mA)
500
Package Equivalence Code
QFP208,1.2SQ,20
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
225
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0