Integrated Device Technology, Inc. 70V3399S133BF | 搜芯易Sourcengine

Integrated Device Technology, Inc. 70V3399S133BF

生命周期状态
Transferred
说明
CABGA 15.00x15.00x1.40 mm 0.80mm Pitch
类别
Semiconductors Memory ICs SRAMs APPLICATION SPECIFIC SRAM

ECCN
3A991.B.2.A
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
S-PBGA-B208
Memory Width
18
Package Code
BGA
Package Shape
SQUARE
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
APPLICATION SPECIFIC SRAM
Operating Mode
SYNCHRONOUS
Number of Ports
2
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Additional Feature
FLOW-THROUGH OR PIPELINED ARCHITECTURE
Memory Organization
128KX18
Number of Functions
1
Number of Terminals
208
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
4.2
Number of Words Code
128K
Memory Density (bits)
2359296
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Max (V)
3.45
Supply Voltage-Min (V)
3.15
Supply Voltage-Nom (V)
3.3
Number of Words (words)
131072
Standby Current-Max (A)
0.03
Standby Voltage-Min (V)
3.15
Supply Current-Max (mA)
400
Package Equivalence Code
BGA208,17X17,32
Clock Frequency-Max (MHz)
133
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
225
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0
Time@Peak Reflow Temperature-Max (s)
20