Integrated Device Technology, Inc. 70V16L20J8 | 搜芯易Sourcengine

Integrated Device Technology, Inc. 70V16L20J8

生命周期状态
Transferred
说明
PLCC 24.00x24.00x3.63 mm 1.27mm Pitch
类别
Semiconductors Memory ICs SRAMs APPLICATION SPECIFIC SRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
S-PQCC-J68
Memory Width
9
Organization
16KX9
Package Code
QCCJ
JESD-609 Code
e0
Package Shape
SQUARE
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
J BEND
Memory Density
147456 bit
Memory IC Type
APPLICATION SPECIFIC SRAM
Operating Mode
ASYNCHRONOUS
Terminal Pitch
1.27 mm
Access Time-Max
20 ns
Number of Ports
2
Number of Words
16384 words
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
Temperature Grade
COMMERCIAL
Terminal Position
QUAD
Supply Current-Max
175 mA
Number of Functions
1
Number of Terminals
68
Standby Current-Max
0.0025 Amp
Standby Voltage-Min
3 V
Number of Words Code
16K
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Package Equivalence Code
LDCC68,1.0SQ
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
225
Time@Peak Reflow Temperature-Max (s)
20