Integrated Device Technology, Inc. 70V06S55J8 | 搜芯易Sourcengine

Integrated Device Technology, Inc. 70V06S55J8

生命周期状态
Transferred
说明
PLCC 24.00x24.00x3.63 mm 1.27mm Pitch
类别
Semiconductors Memory ICs SRAMs MULTI-PORT SRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
24.2062
Length (mm)
24.2062
JESD-30 Code
S-PQCC-J68
Memory Width
8
Package Code
QCCJ
Package Shape
SQUARE
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
J BEND
J-STD-609 Code
e0
Memory IC Type
MULTI-PORT SRAM
Operating Mode
ASYNCHRONOUS
Number of Ports
2
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
QUAD
Additional Feature
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN
Memory Organization
16KX8
Number of Functions
1
Number of Terminals
68
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
55
Number of Words Code
16K
Memory Density (bits)
131072
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
4.572
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
3
Supply Voltage-Nom (V)
3.3
Number of Words (words)
16384
Standby Current-Max (A)
0.005
Standby Voltage-Min (V)
2
Supply Current-Max (mA)
180
Package Equivalence Code
LDCC68,1.0SQ
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
225
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0
Time@Peak Reflow Temperature-Max (s)
20