Integrated Device Technology, Inc. 70T659S8BC8 | 搜芯易Sourcengine

Integrated Device Technology, Inc. 70T659S8BC8

生命周期状态
Transferred
说明
CABGA 17.00x17.00x1.40 mm 1.00mm Pitch
类别
Semiconductors Memory ICs SRAMs MULTI-PORT SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
17
Length (mm)
17
JESD-30 Code
S-PBGA-B256
Memory Width
36
Package Code
LBGA
Package Shape
SQUARE
Package Style
GRID ARRAY, LOW PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
MULTI-PORT SRAM
Operating Mode
ASYNCHRONOUS
Number of Ports
2
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Memory Organization
128KX36
Number of Functions
1
Number of Terminals
256
Terminal Pitch (mm)
1
Access Time-Max (ns)
8
Number of Words Code
128K
Memory Density (bits)
4718592
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.5
Supply Voltage-Max (V)
2.6
Supply Voltage-Min (V)
2.4
Supply Voltage-Nom (V)
2.5
Number of Words (words)
131072
Standby Current-Max (A)
0.01
Standby Voltage-Min (V)
2.4
Supply Current-Max (mA)
475
Package Equivalence Code
BGA256,16X16,40
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
225
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0
Time@Peak Reflow Temperature-Max (s)
20