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70T659S10BFGI8

Integrated Device Technology, Inc.

Integrated Device Technology, Inc. 70T659S10BFGI8
  • ECCN
    3A991.B.2.A
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.41
  • SB Code
    8542.32.00.40
  • Width
    15 mm
  • Length
    15 mm
  • I/O Type
    COMMON
  • Technology
    CMOS
  • JESD-30 Code
    S-PBGA-B208
  • Memory Width
    36
  • Organization
    128KX36
  • Package Code
    TFBGA
  • JESD-609 Code
    e1
  • Package Shape
    SQUARE
  • Package Style
    GRID ARRAY, THIN PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory Density
    4718592 bit
  • Memory IC Type
    APPLICATION SPECIFIC SRAM
  • Operating Mode
    ASYNCHRONOUS
  • Terminal Pitch
    0.8 mm
  • Access Time-Max
    10 ns
  • Number of Ports
    2
  • Number of Words
    131072 words
  • Parallel/Serial
    PARALLEL
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Seated Height-Max
    1.2 mm
  • Temperature Grade
    INDUSTRIAL
  • Terminal Position
    BOTTOM
  • Supply Current-Max
    445 mA
  • Number of Functions
    1
  • Number of Terminals
    208
  • Standby Current-Max
    0.02 Amp
  • Standby Voltage-Min
    2.4 V
  • Number of Words Code
    128K
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Package Equivalence Code
    BGA208,17X17,32
  • Operating Temperature-Max
    85 Cel
  • Operating Temperature-Min
    -40 Cel
  • Supply Voltage-Max (Vsup)
    2.6 V
  • Supply Voltage-Min (Vsup)
    2.4 V
  • Supply Voltage-Nom (Vsup)
    2.5 V
  • Moisture Sensitivity Level
    3
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30

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70T659S10BFGI8
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70T659S10BFGI8