70P3307S250RM
Integrated Device Technology, Inc.
- 生命周期状态Transferred
- RoHS符合RoHS标准
- 说明FCBGA 25.00x25.00x2.60 mm 1.00mm Pitch
- 类别
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- TechnologyCMOS
- Width (mm)25
- Length (mm)25
- JESD-30 CodeS-PBGA-B576
- Memory Width18
- Package CodeBGA
- Package ShapeSQUARE
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- J-STD-609 Codee1
- Memory IC TypeQDR SRAM
- Operating ModeSYNCHRONOUS
- Parallel/SerialPARALLEL
- Terminal FinishTIN SILVER COPPER
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Memory Organization1MX18
- Number of Functions1
- Number of Terminals576
- Terminal Pitch (mm)1
- Access Time-Max (ns)0.45
- Number of Words Code1M
- Memory Density (bits)18874368
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)2.55
- Supply Voltage-Max (V)1.9
- Supply Voltage-Min (V)1.7
- Supply Voltage-Nom (V)1.8
- Number of Words (words)1048576
- Moisture Sensitivity Level4
- Peak Reflow Temperature (Cel)245
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
- Time@Peak Reflow Temperature-Max (s)30
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70P3307S250RM
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70P3307S250RM