Integrated Device Technology, Inc. 7016S25JB | 搜芯易Sourcengine

Integrated Device Technology, Inc. 7016S25JB

生命周期状态
Discontinued
说明
Application Specific SRAM, 16KX9, 25ns, CMOS, PQCC68
类别
Semiconductors Memory ICs SRAMs APPLICATION SPECIFIC SRAM

ECCN
3A001.a.2.c
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
S-PQCC-J68
Memory Width
9
Package Code
QCCJ
Package Shape
SQUARE
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
J BEND
J-STD-609 Code
e0
Memory IC Type
APPLICATION SPECIFIC SRAM
Operating Mode
ASYNCHRONOUS
Number of Ports
2
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
MILITARY
Terminal Position
QUAD
Memory Organization
16KX9
Number of Functions
1
Number of Terminals
68
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
25
Number of Words Code
16K
Memory Density (bits)
147456
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
16384
Standby Current-Max (A)
0.03
Standby Voltage-Min (V)
4.5
Supply Current-Max (mA)
340
Package Equivalence Code
LDCC68,1.0SQ
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
225
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55
Screening Level / Reference Standard
MIL-PRF-38535
Time@Peak Reflow Temperature-Max (s)
20