Integrated Device Technology, Inc. 7008S35PFB | 搜芯易Sourcengine

Integrated Device Technology, Inc. 7008S35PFB

生命周期状态
Discontinued
说明
Multi-Port SRAM, 64KX8, 35ns, CMOS, PQFP100
类别
Semiconductors Memory ICs SRAMs MULTI-PORT SRAM

ECCN
3A001.a.2.c
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
14
Length (mm)
14
JESD-30 Code
S-PQFP-G100
Memory Width
8
Package Code
LFQFP
Package Shape
SQUARE
Package Style
FLATPACK, LOW PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e0
Memory IC Type
MULTI-PORT SRAM
Operating Mode
ASYNCHRONOUS
Number of Ports
2
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Lead (Sn85Pb15)
DLA Qualification
Not Qualified
Temperature Grade
MILITARY
Terminal Position
QUAD
Memory Organization
64KX8
Number of Functions
1
Number of Terminals
100
Terminal Pitch (mm)
0.5
Access Time-Max (ns)
35
Number of Words Code
64K
Memory Density (bits)
524288
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.6
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
65536
Standby Current-Max (A)
0.03
Standby Voltage-Min (V)
4.5
Supply Current-Max (mA)
335
Package Equivalence Code
QFP100,.63SQ,20
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
240
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55
Screening Level / Reference Standard
MIL-PRF-38535
Time@Peak Reflow Temperature-Max (s)
20