6MBI75L-060
Fuji Electric Co., Ltd.
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max3.5 V
- JESD-30 CodeR-XUFM-X19
- ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Additional FeatureHIGH SPEED
- Fall Time-Max (tf)350 ns
- Number of Elements6
- Number of Terminals19
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Collector Current-Max (IC)75 A
- Power Dissipation-Max (Abs)300 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max600 V
- Power Dissipation Ambient-Max1950 W
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6MBI75L-060