Fuji Electric Co., Ltd. 6MBI20GS-060 | 搜芯易Sourcengine

Fuji Electric Co., Ltd. 6MBI20GS-060

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2.8 V
JESD-30 Code
R-XSFM-P11
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
Case Connection
ISOLATED
Terminal Position
SINGLE
Number of Elements
6
Number of Terminals
11
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
20 A
Power Dissipation-Max (Abs)
70 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
600 V