Renesas Technology Corp. 6AM15 | 搜芯易Sourcengine

Renesas Technology Corp. 6AM15

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 10A I(D), 60V, 0.115ohm, 6-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T12
Configuration
COMPLEX
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
6
Number of Terminals
12
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Drain Current-Max (ID)
10 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
60 V
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.115 ohm
Pulsed Drain Current-Max (IDM)
40 A