Integrated Device Technology, Inc. 6116LA35SOI | 搜芯易Sourcengine

Integrated Device Technology, Inc. 6116LA35SOI

生命周期状态
Discontinued
说明
Application Specific SRAM, 2KX8, 35ns, CMOS, PDSO24
类别
Semiconductors Memory ICs SRAMs APPLICATION SPECIFIC SRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
7.5
Length (mm)
15.4
JESD-30 Code
R-PDSO-G24
Memory Width
8
Package Code
SOP
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e0
Memory IC Type
APPLICATION SPECIFIC SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Memory Organization
2KX8
Number of Terminals
24
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
35
Number of Words Code
2K
Memory Density (bits)
16384
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
2.65
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
2048
Standby Current-Max (A)
3.0E-5
Standby Voltage-Min (V)
2
Supply Current-Max (mA)
95
Package Equivalence Code
SOP24,.4
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
225
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
30