ABB Limited 5SND0800M120100 | 搜芯易Sourcengine

ABB Limited 5SND0800M120100

生命周期状态
Active-Unconfirmed
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 800A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PUFM-X10
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
10
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
5000
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
835
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
1080
Collector Current-Max (IC) (A)
800
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
1200
Screening Level / Reference Standard
IEC-60747