UTC, Ltd. 5N60G-TF3T-T | 搜芯易Sourcengine

UTC, Ltd. 5N60G-TF3T-T

生命周期状态
Active
说明
Power Field-Effect Transistor, 5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
36
Drain Current-Max (ID) (A)
5
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
120
DS Breakdown Voltage-Min (V)
600
Feedback Cap-Max (Crss) (pF)
8.5
Turn-off Time-Max (toff) (ns)
185
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
210
Pulsed Drain Current-Max (IDM) (A)
20
Drain-source On Resistance-Max (ohm)
2.2