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5962R8771002VPA

NATIONAL SEMICONDUCTOR CORP

NATIONAL SEMICONDUCTOR CORP 5962R8771002VPA
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.33.00.01
  • SB Code
    8542.33.00.00
  • Power
    NO
  • Low-Bias
    NO
  • Wideband
    NO
  • Low-Offset
    NO
  • Micropower
    NO
  • Technology
    BIPOLAR
  • Total Dose
    100k Rad(Si) V
  • Width (mm)
    7.62
  • JESD-30 Code
    R-GDIP-T8
  • Package Code
    DIP
  • Package Shape
    RECTANGULAR
  • Package Style
    IN-LINE Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • Amplifier Type
    OPERATIONAL AMPLIFIER
  • J-STD-609 Code
    e0
  • Terminal Finish
    TIN LEAD
  • Amp Architecture
    VOLTAGE-FEEDBACK
  • Voltage Gain-Min
    25000
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    MILITARY
  • Terminal Position
    DUAL
  • Programmable Power
    NO
  • Number of Functions
    2
  • Number of Terminals
    8
  • Terminal Pitch (mm)
    2.54
  • Package Body Material
    CERAMIC, GLASS-SEALED
  • Frequency Compensation
    YES
  • Seated Height-Max (mm)
    5.08
  • Supply Voltage-Nom (V)
    5
  • Unity Gain BW-Nom (kHz)
    1000
  • Package Equivalence Code
    DIP8,.3
  • Supply Voltage Limit-Max (V)
    32
  • Input Offset Voltage-Max (uV)
    4000
  • Negative Supply Voltage-Nom (V)
    0
  • Operating Temperature-Max (Cel)
    125
  • Operating Temperature-Min (Cel)
    -55
  • Bias Current-Max (IIB) @25C (uA)
    0.06
  • Neg Supply Voltage Limit-Max (V)
    0
  • Common-mode Reject Ratio-Nom (dB)
    70
  • Average Bias Current-Max (IIB) (uA)
    -0.001
  • Screening Level / Reference Standard
    MIL-PRF-38535 Class V

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5962R8771002VPA
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5962R8771002VPA