AUSTIN SEMICONDUCTOR INC 5962-9062203MTA | 搜芯易Sourcengine

AUSTIN SEMICONDUCTOR INC 5962-9062203MTA

生命周期状态
Discontinued
说明
Fast Page DRAM, 4MX1, 80ns, CMOS, CDIP18
类别
Semiconductors Memory ICs DRAMs FAST PAGE DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
SEPARATE
Technology
CMOS
Width (mm)
10.16
Access Mode
FAST PAGE
Length (mm)
22.86
JESD-30 Code
R-CDIP-T18
Memory Width
1
Package Code
DIP
Self Refresh
NO
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
Memory IC Type
FAST PAGE DRAM
Operating Mode
ASYNCHRONOUS
Refresh Cycles
1024
Number of Ports
1
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
MILITARY
Terminal Position
DUAL
Additional Feature
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Memory Organization
4MX1
Number of Functions
1
Number of Terminals
18
Terminal Pitch (mm)
2.54
Access Time-Max (ns)
80
Number of Words Code
4M
Memory Density (bits)
4194304
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Output Characteristics
3-STATE
Seated Height-Max (mm)
3.93
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
4194304
Standby Current-Max (A)
0.004
Supply Current-Max (mA)
85
Package Equivalence Code
DIP18,.4
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55
Screening Level / Reference Standard
MIL-STD-883