VERTICAL CIRCUITS INC 5962-0251802NXB | 搜芯易Sourcengine

VERTICAL CIRCUITS INC 5962-0251802NXB

生命周期状态
Discontinued
说明
Synchronous DRAM Module, 256MX8, 6ns, CMOS, PDSO54
类别
Semiconductors Memory ICs DRAMs SYNCHRONOUS DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PDSO-G54
Memory Width
8
Organization
256MX8
Package Code
SSOP
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, SHRINK PITCH Meter
Surface Mount
YES
Terminal Form
GULL WING
Memory Density
2147483648 bit
Memory IC Type
SYNCHRONOUS DRAM MODULE
Refresh Cycles
8192
Terminal Pitch
0.8 mm
Access Time-Max
6 ns
Number of Words
268435456 words
Screening Level
MIL-PRF-38535 Class N
Terminal Finish
TIN LEAD
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Supply Current-Max
2000 mA
Number of Terminals
54
Standby Current-Max
0.01 Amp
Number of Words Code
256M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Sequential Burst Length
1,2,4,8,FP
Interleaved Burst Length
1,2,4,8
Package Equivalence Code
SOP54,.68,32
Operating Temperature-Max
85 Cel
Operating Temperature-Min
-40 Cel
Supply Voltage-Nom (Vsup)
3.3 V
Clock Frequency-Max (fCLK)
100 MHz