ONSEMI 55GN01CA-TB-E | 搜芯易Sourcengine

ONSEMI 55GN01CA-TB-E

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
55GN01CA Series NPN 10 V 200 mW 70 mA UHF Wide-Band Low Noise Amplifier - CP-3
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
JEDEC-95 Code
TO-236AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e6
Terminal Finish
TIN BISMUTH
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
C BAND
DC Current Gain-Min (hFE)
100
Power Dissipation-Max (W)
0.2
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.07
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
10
Collector-base Capacitance-Max (pF)
1.3
Transition Frequency-Nom (fT) (MHz)
5500
Time@Peak Reflow Temperature-Max (s)
30