514256A12M/BUAJC
Motorola,Inc.
- 生命周期状态Discontinued
- 说明Fast Page DRAM, 256KX4, 120ns, CMOS, CDSO20
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-XDSO-N20
- Memory Width4
- Organization256KX4
- Package CodeSON
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- Memory Density1048576 bit
- Memory IC TypeFAST PAGE DRAM
- Refresh Cycles512
- Terminal Pitch1.27 mm
- Access Time-Max120 ns
- Number of Words262144 words
- Screening Level38535Q/M;38534H;883B
- Terminal FinishTin/Lead (Sn/Pb)
- Temperature GradeMILITARY
- Terminal PositionDUAL
- Supply Current-Max60 mA
- Number of Terminals20
- Standby Current-Max0.002 Amp
- Number of Words Code256K
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC
- Output Characteristics3-STATE
- Package Equivalence CodeSOLCC20/26,.35
- Operating Temperature-Max125 Cel
- Operating Temperature-Min-55 Cel
- Supply Voltage-Nom (Vsup)5 V
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514256A12M/BUAJC