ASI Semiconductor, Inc. 5082-2817 | 搜芯易Sourcengine

ASI Semiconductor, Inc. 5082-2817

生命周期状态
Active
说明
Mixer Diode, Medium Barrier, Very High Frequency to Ultra High Frequency, 400ohm Z(V) Max, 6dB Noise Figure, Silicon
类别
Semiconductors Diodes Microwave Mixer Diodes MIXER DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.60
SB Code
8541.10.00.60

Diode Type
MIXER DIODE
Technology
SCHOTTKY
JESD-30 Code
O-LALF-W2
Configuration
SINGLE
Package Shape
ROUND
Package Style
LONG FORM Meter
Surface Mount
NO
Terminal Form
WIRE
Frequency Band
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
AXIAL
Number of Elements
1
Impedance-Max (ohm)
400
Impedance-Min (ohm)
250
Number of Terminals
2
Noise Figure-Max (dB)
6
Package Body Material
GLASS
Diode Element Material
SILICON
Type of Schottky Barrier
MEDIUM BARRIER
Power Dissipation-Max (W)
0.25
Diode Capacitance-Max (pF)
1
Operating Frequency-Max (GHz)
2
Operating Temperature-Max (Cel)
200
Operating Temperature-Min (Cel)
-60