UTC, Ltd. 4N70KL-T2Q-T | 搜芯易Sourcengine

UTC, Ltd. 4N70KL-T2Q-T

生命周期状态
Active
说明
Power Field-Effect Transistor
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262AA
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
106
Drain Current-Max (ID) (A)
4.4
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
700
Feedback Cap-Max (Crss) (pF)
11
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
120
Pulsed Drain Current-Max (IDM) (A)
17.6
Drain-source On Resistance-Max (ohm)
2.8