Renesas Technology Corp. 3SK296 | 搜芯易Sourcengine

Renesas Technology Corp. 3SK296

生命周期状态
Contact Mfr
说明
Trans RF MOSFET N-CH 12V 0.025A 4-Pin(3+Tab) SOT-343
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
DUAL GATE, DEPLETION MODE
Case Connection
SOURCE
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Power Gain-Min (Gp) (dB)
16
Drain Current-Max (ID) (A)
0.025
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
12
Feedback Cap-Max (Crss) (pF)
0.03