Toshiba Corporation 3SK292(TE85R,F) | 搜芯易Sourcengine

Toshiba Corporation 3SK292(TE85R,F)

生命周期状态
EOL
RoHS
符合RoHS标准
说明
MOSFET N-CH 12.5 30MA SMQ
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
N-Channel Dual Gate
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
DUAL GATE, DEPLETION MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
23.5 dB
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.03 A
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
Feedback Cap-Max (Crss)
0.04 pF
DS Breakdown Voltage-Min
12.5 V
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED