3SK264-5-TG-E
ONSEMI
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Trans RF FET N-CH 15V 0.03A 4-Pin CP T/R
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationN-Channel Dual Gate
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee6
- Terminal FinishTIN BISMUTH
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)0.2
- Drain Current-Max (ID) (A)0.03
- Moisture Sensitivity Level1
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)125
- Time@Peak Reflow Temperature-Max (s)30
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3SK264-5-TG-E