Toshiba Corporation 3SK260TE85R | 搜芯易Sourcengine

Toshiba Corporation 3SK260TE85R

生命周期状态
Active
说明
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
DUAL GATE, DEPLETION MODE
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Power Gain-Min (Gp) (dB)
21
Drain Current-Max (ID) (A)
0.03
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
15
Feedback Cap-Max (Crss) (pF)
0.04
Operating Temperature-Max (Cel)
125