Renesas Technology Corp. 3SK238XW | 搜芯易Sourcengine

Renesas Technology Corp. 3SK238XW

生命周期状态
Transferred
说明
RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Drain Current-Max (ID) (A)
0.035
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
12