Hitachi, Ltd. 3SK186 | 搜芯易Sourcengine

Hitachi, Ltd. 3SK186

生命周期状态
Transferred
说明
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
DUAL GATE, DEPLETION MODE
Case Connection
SOURCE
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Power Gain-Min (Gp) (dB)
16
Power Dissipation-Max (W)
0.15
Drain Current-Max (ID) (A)
0.035
Transistor Element Material
SILICON
Feedback Cap-Max (Crss) (pF)
0.03
Operating Temperature-Max (Cel)
125