3N65L-TM3-T
UTC, Ltd.
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Power Field-Effect Transistor, 3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET, TO-251
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- JEDEC-95 CodeTO-251
- Surface MountNO
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Case ConnectionDRAIN
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)50
- Drain Current-Max (ID) (A)3
- Operating Temperature-Max (Cel)150
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