DIGITRON SEMICONDUCTORS 3N211-PBF | 搜芯易Sourcengine

DIGITRON SEMICONDUCTORS 3N211-PBF

生命周期状态
Active
RoHS
符合RoHS标准
说明
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-72
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-MBCY-W4
Configuration
SINGLE
JEDEC-95 Code
TO-72
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE AND SUBSTRATE
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
4
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Power Gain-Min (Gp) (dB)
24
Drain Current-Max (ID) (A)
0.05
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
27
Feedback Cap-Max (Crss) (pF)
0.05
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-65
Power Dissipation Ambient-Max (W)
0.36
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED