3N211
ASI Semiconductor, Inc.
- 生命周期状态Active-Unconfirmed
- 说明Power Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountNO
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)0.36
- Drain Current-Max (ID) (A)0.05
- Operating Temperature-Max (Cel)200
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3N211
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3N211