Motorola,Inc. 3N211 | 搜芯易Sourcengine

Motorola,Inc. 3N211

生命周期状态
Discontinued
说明
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-206AF
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MBCY-W4
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-206AF
JESD-609 Code
e0
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Finish
TIN LEAD
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
24 dB
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.05 A
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
Feedback Cap-Max (Crss)
0.05 pF
DS Breakdown Voltage-Min
27 V
Operating Temperature-Max
175 Cel
Operating Temperature-Min
-65 Cel
Transistor Element Material
SILICON