HARRIS SEMICONDUCTOR 3N206 | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR 3N206

生命周期状态
Active
说明
N-CHANNEL POWER MOSFET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Configuration
N-Channel Dual Gate
JESD-609 Code
e0
Surface Mount
NO
FET Technology
METAL-OXIDE SEMICONDUCTOR
Terminal Finish
Tin/Lead (Sn/Pb)
Number of Elements
1
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.05 A
Operating Temperature-Max
200 Cel
Power Dissipation-Max (Abs)
0.36 W