3N204
ASI Semiconductor, Inc.
- 生命周期状态Active-Unconfirmed
- 说明RF Small Signal Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountNO
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.05 A
- Operating Temperature-Max200 Cel
- Power Dissipation-Max (Abs)0.36 W
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3N204
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3N204