GE SOLID STATE 3N200 | 搜芯易Sourcengine

GE SOLID STATE 3N200

生命周期状态
Discontinued
说明
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-72
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MBCY-W4
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-72
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
DUAL GATE, DEPLETION MODE
Case Connection
SOURCE AND SUBSTRATE
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
10 dB
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.05 A
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
Feedback Cap-Max (Crss)
0.03 pF
DS Breakdown Voltage-Min
20 V
Transistor Element Material
SILICON