Toshiba Corporation 2SK879-GR | 搜芯易Sourcengine

Toshiba Corporation 2SK879-GR

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.80

Application
SWITCHING
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
JUNCTION
J-STD-609 Code
e0
Operating Mode
DEPLETION MODE
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
0.1
Transistor Element Material
SILICON
Feedback Cap-Max (Crss) (pF)
2.6
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
125
Power Dissipation Ambient-Max (W)
0.1
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED