Hitachi, Ltd. 2SK522-E | 搜芯易Sourcengine

Hitachi, Ltd. 2SK522-E

生命周期状态
Transferred
说明
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PSIP-W3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Power Gain-Min (Gp) (dB)
20
Power Dissipation-Max (W)
0.2
Drain Current-Max (ID) (A)
0.02
Transistor Element Material
SILICON
Operating Temperature-Max (Cel)
150