Toshiba Corporation 2SK4023 | 搜芯易Sourcengine

Toshiba Corporation 2SK4023

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 1A I(D), 450V, 4.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
20
Drain Current-Max (ID) (A)
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
450
Feedback Cap-Max (Crss) (pF)
2
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
122
Pulsed Drain Current-Max (IDM) (A)
2
Drain-source On Resistance-Max (ohm)
4.6