Toshiba Corporation 2SK389-GR | 搜芯易Sourcengine

Toshiba Corporation 2SK389-GR

生命周期状态
Discontinued
说明
MOSFETs pb zip-fet(lf),discon(02-04)/phase-out(04-07)/obsolete(10-04),
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PZIP-T7
Configuration
COMMON SUBSTRATE, 2 ELEMENTS
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
ZIG-ZAG
Additional Feature
LOW NOISE
Number of Elements
2
Number of Terminals
7
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
AMPLIFIER
Operating Temperature-Max
125 Cel
Power Dissipation-Max (Abs)
0.2 W
Transistor Element Material
SILICON