Toshiba Corporation 2SK3843(TE24L) | 搜芯易Sourcengine

Toshiba Corporation 2SK3843(TE24L)

生命周期状态
EOL
说明
Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-PDSO-F4
Configuration
SINGLE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
125
Drain Current-Max (ID) (A)
75
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
40
Feedback Cap-Max (Crss) (pF)
800
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
542
Pulsed Drain Current-Max (IDM) (A)
300
Drain-source On Resistance-Max (ohm)
0.008