- 生命周期状态Active
- 说明RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeDEPLETION MODE
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- DS Breakdown Voltage-Min17 V
- Transistor Element MaterialSILICON
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