Fuji Electric Co., Ltd. 2SK2763-01 | 搜芯易Sourcengine

Fuji Electric Co., Ltd. 2SK2763-01

生命周期状态
Active-Unconfirmed
说明
Power Field-Effect Transistor, 4A I(D), 800V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-247
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
4 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
800 V
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
358 mJ
Drain-source On Resistance-Max
4 ohm
Pulsed Drain Current-Max (IDM)
16 A