Toshiba Corporation 2SK2545 | 搜芯易Sourcengine

Toshiba Corporation 2SK2545

生命周期状态
Contact Mfr
说明
MOSFETs 220nis2 pln,active,discon(08-10)/phase-out(10-01)/obsolete(10-04),
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
40
Drain Current-Max (ID) (A)
6
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
600
Feedback Cap-Max (Crss) (pF)
130
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
40
Avalanche Energy Rating (Eas) (mJ)
345
Pulsed Drain Current-Max (IDM) (A)
24
Drain-source On Resistance-Max (ohm)
1.25