NEC Corporation 2SK2479 | 搜芯易Sourcengine

NEC Corporation 2SK2479

生命周期状态
Discontinued
REACH
REACH compliant
说明
Power Field-Effect Transistor, 3A I(D), 900V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
3 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
900 V
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
5.4 mJ
Drain-source On Resistance-Max
7.5 ohm
Pulsed Drain Current-Max (IDM)
8 A