Toshiba Corporation 2SK2417(F) | 搜芯易Sourcengine

Toshiba Corporation 2SK2417(F)

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 7.5A I(D), 250V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
7.5 A
Transistor Application
SWITCHING
Feedback Cap-Max (Crss)
80 pF
DS Breakdown Voltage-Min
250 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
30 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
110 mJ
Drain-source On Resistance-Max
0.5 ohm
Pulsed Drain Current-Max (IDM)
30 A