Toshiba Corporation 2SK2332 | 搜芯易Sourcengine

Toshiba Corporation 2SK2332

生命周期状态
Active
说明
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Junction FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-CQSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
DLA Qualification
Not Qualified
Terminal Position
QUAD
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
KA BAND
Drain Current-Max (ID) (A)
0.08
Transistor Element Material
GALLIUM ARSENIDE
Operating Temperature-Max (Cel)
125