Toshiba Corporation 2SK2331TE12R | 搜芯易Sourcengine

Toshiba Corporation 2SK2331TE12R

生命周期状态
Active
说明
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PQSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
JUNCTION
J-STD-609 Code
e0
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
QUAD
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
X BAND
Power Gain-Min (Gp) (dB)
10
Drain Current-Max (ID) (A)
0.12
Transistor Element Material
GALLIUM ARSENIDE
Operating Temperature-Max (Cel)
125